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| NTE312 N-Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO-92 package. Features: D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 mho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High-Frequency Figure-of-Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross-Modulation Minimized by Square-Law Transfer Characteristic D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25C ), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.88mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), TL . . . . . . . . . . . . . . . +260C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current Gate 1 Leakage Current Gate-Source Cutoff Voltage ON Characteristics Zero-Gate Voltage Drain Current Small-Signal Characteristics Forward Transfer Admittance Input Admittance |yfs| Re(yis) VDS = 15V, VGS = 0, f = 1kHz 100MHz VDS = 15V, VGS = 0 400MHz Output Admittance Output Conductance |yos| Re(yos) VDS = 15V, VGS = 0, f = 1kHz 100MHz VDS = 15V, VGS = 0 400MHz Forward Transconductance Input Capacitance Reverse Transfer Capacitance Input Susceptance Re(yfs) Ciss Crss IM(Yis) VDS = 15V, VGS = 0, f = 400MHz VDS = 15V, VGS = 0, f = 1.0MHz VDS = 15V, VGS = 0, f = 1.0MHz 100MHz VDS = 15V, VGS = 0 400MHz Functional Characteristics Noise Figure NF 100MHz VDS = 15V, ID = 5mA, i RiG = 1k 400MHz 100MHz VDS = 15V, ID = 5mA, i RiG = 1k 400MHz 100MHz VDS = 15V, VGS = 0 400MHz - - 18 10 - - - - - - - - 2.0 4.0 - - 1000 4000 dB dB dB dB mhos mhos 4500 - - - - - 4000 - - - - - - - - - - - - - - - 7500 100 1000 50 75 100 - 4.5 1.0 3.0 12.0 mhos mhos mhos mhos mhos mhos mhos pF pF mmho mmho IDSS VDS = 15V, VGS = 0, Note 1 5.0 - 15 mA V(BR)GSS IGSS IG1SS VGS(off) IG = -1.0A, VDS = 0 VGS = -20V, VDS = 0 VG1S = -20V, VDS = 0, TA = +100C VDS = 15V, ID = 10mA -30 - - -1.0 - - - - - -1.0 -0.5 -6.0 V nA A V Symbol Test Conditions Min Typ Max Unit Common Source Power Gain Gps Output Susceptance IM(Yos) Note 1. tp = 100ms, Duty Cycle = 10%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max GSD .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max NOTE: Drain and Source are interchangeable. |
Price & Availability of NTE312
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